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A NUMERICAL SOLUTION OF THE POISSON-SCHRODINGER PROBLEM FOR ¨ A VERTICAL GATED QUANTUM DOT

Abstract

We present a numerical solution of the Poisson-Schr¨odinger problem for a semiconductor nanostructure containing a single quantum dot. The main outcome of our work is the lateral confinement potential, which determines the electronic properties of the nanodevice. We study the real nanodevice with cylindrical symmetry, which allows us to solve the three-dimensional problem on a two-dimensional mesh. We discuss the self-consistency of the solution with respect to the distribution of ionized donors inside the nanodevice.

Keywords:

semiconductor quantum dots, quantum dots, Poisson-Schr¨odinger problem

Details

Issue
Vol. 8 No. 4 (2004)
Section
Research article
Published
2004-12-29
Licencja:
Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

Author Biographies

KRZYSZTOF LIS,
AGH University of Science and Technology, Faculty of Physics and Nuclear Techniques



STANISŁAW BEDNAREK,
AGH University of Science and Technology, Faculty of Physics and Nuclear Techniques



JANUSZ ADAMOWSKI,
AGH University of Science and Technology, Faculty of Physics and Nuclear Techniques



Authors

  • KRZYSZTOF LIS

    AGH University of Science and Technology, Faculty of Physics and Nuclear Techniques
  • STANISŁAW BEDNAREK

    AGH University of Science and Technology, Faculty of Physics and Nuclear Techniques
  • JANUSZ ADAMOWSKI

    AGH University of Science and Technology, Faculty of Physics and Nuclear Techniques

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