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  3. Vol. 12 No. 1-2 (2008)
  4. MODELLING OF THIN Si LAYERS GROWTH ON PARTIALLY MASKED Si SUBSTRATE

MODELLING OF THIN Si LAYERS GROWTH ON PARTIALLY MASKED Si SUBSTRATE

Abstract

This paper presents a numerical simulation of epitaxial lateral overgrowth of silicon layers from the liquid phase of an Sn solvent. A two dimensional diffusion equation has been solved and the concentration profiles of Si in a Si-Sn rich solution during the growth have been constructed. The epilayer thickness and width have been obtained from the concentration near the interface.

Keywords:

epitaxial lateral overgrowth, liquid-phase epitaxial growth, computer simulations

Details

Issue
Vol. 12 No. 1-2 (2008)
Section
Research article
Published
2008-06-30
Licencja:
Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

Authors

  • SŁAWOMIR GUŁKOWSKI

    Lublin University of Technology, Institute of Physics

  • JAN M. OLCHOWIK

    Lublin University of Technology, Institute of Physics

  • IWONA JÓŹWIK

    Lublin University of Technology, Institute of Physics

  • PAVLO P. MOSKVIN

    Zhitomir State Technological University

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