MODELLING OF THIN Si LAYERS GROWTH ON PARTIALLY MASKED Si SUBSTRATE
This paper presents a numerical simulation of epitaxial lateral overgrowth of silicon layers from the liquid phase of an Sn solvent. A two dimensional diffusion equation has been solved and the concentration profiles of Si in a Si-Sn rich solution during the growth have been constructed. The epilayer thickness and width have been obtained from the concentration near the interface.
Keywords:epitaxial lateral overgrowth, liquid-phase epitaxial growth, computer simulations
- Vol. 12 No. 1-2 (2008)
- Research article
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