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InP:Fe NANODIODE CONDUCTIVITY CURRENT PERSISTENT PHOTOENHAMCEMENT DECAY

Abstract

The temporal decay of the persistent photoenhancement of the conductivity current flowing through the active channel of two samples of a typical nanodevice comprising a low resistivity n-type InP:Fe epitaxial layer and a semi-insulating InP:Fe substrate is experimentally investigated at room temperature and interpreted via consideration of the functionality of the diodic interface potential barrier. A mean decay mechanism and its distinct regimes are singled out

Keywords:

photonic nanodevices, persistent photoconductivity

Details

Issue
Vol. 17 No. 3-4 (2013)
Section
Research article
Published
2013-12-29
Licencja:
Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

Authors

  • GEORGIOS E. ZARDAS

    University of Athens, Department of Physics
  • EMMANUEL A. ANAGNOSTAKIS

    Hellenic Physical Society

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