InP:Fe NANODIODE CONDUCTIVITY CURRENT PERSISTENT PHOTOENHAMCEMENT DECAY
The temporal decay of the persistent photoenhancement of the conductivity current flowing through the active channel of two samples of a typical nanodevice comprising a low resistivity n-type InP:Fe epitaxial layer and a semi-insulating InP:Fe substrate is experimentally investigated at room temperature and interpreted via consideration of the functionality of the diodic interface potential barrier. A mean decay mechanism and its distinct regimes are singled out
Keywords:photonic nanodevices, persistent photoconductivity
- Vol. 17 No. 3-4 (2013)
- Research article
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