InP:Fe NANODIODE CONDUCTIVITY CURRENT PERSISTENT PHOTOENHAMCEMENT DECAY
Abstract
The temporal decay of the persistent photoenhancement of the conductivity current flowing through the active channel of two samples of a typical nanodevice comprising a low resistivity n-type InP:Fe epitaxial layer and a semi-insulating InP:Fe substrate is experimentally investigated at room temperature and interpreted via consideration of the functionality of the diodic interface potential barrier. A mean decay mechanism and its distinct regimes are singled out
Keywords:
photonic nanodevices, persistent photoconductivityDetails
- Issue
- Vol. 17 No. 3-4 (2013)
- Section
- Research article
- Published
- 2013-12-29
- Licencja:
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This work is licensed under a Creative Commons Attribution 4.0 International License.
