TUNNELING THROUGH A BARRIER UNDER TRANSVERSE MAGNETIC FIELD AND 𝑰-𝑽 CHARACTERISTIC

Abstract

The case whereby the transmission coefficient through a barrier, sandwiched by semiconductor reservoirs, under bias is provided by a general formula involving the logarithmic wave function derivative at the barrier entrance is now extended to include the influence of
magnetic field perpendicular to the longitudinal barrier direction. Under the circumstances, the equation governing the logarithmic wave function derivative is appropriately modified via an effective potential energy which takes account of the magnetic field. Subsequently, the procedure for obtaining the transmission coefficient is applied to the case involving a smooth double, as well as quadruple, barrier for which the 𝐼-𝑉 characteristic is obtained. The results show reduction in current with increase in the magnetic field, up to a certain value of bias. Furthermore, increase in temperature exhibits increase in current as well as movement of the current peaks in the 𝐼-𝑉 curves towards lower bias.